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Brand Name : Infineon Technologies
Model Number : IPB042N10N3GATMA1
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1 - 3 days
Packaging Details : standard
Rds On (Max) @ Id, Vgs : 4.2mOhm @ 50A, 10V
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
IPB042N10N3GATMA1 MOSFET Power Electronics High Power Low On Resistance Ideal
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 214W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | PG-TO263-3 | |
Package / Case |
IPB042N10N3GATMA1 MOSFET
This IPB042N10N3GATMA1 MOSFET is a N-channel enhancement mode power field effect transistor designed for high voltage, high speed switching applications. It is produced using the advanced Field Stop IGBT Technology. This device features low on-state resistance and fast switching times.
Features:
- N-Channel Enhancement Mode
- High Voltage and Speed Switching
- Low On-State Resistance
- Fast Switching Times
- Advanced Field Stop IGBT Technology
- RoHS Compliant
Specifications:
- Drain-Source Voltage: 600V
- Continuous Drain Current: 42A
- Drain-Source On-State Resistance: 0.042Ω
- Operating Temperature Range: -55°C to 175°C
- Package: TO-220
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• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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How to buy >>>
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Service >>>
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• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
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IPB042N10N3GATMA1 MOSFET Power Electronics High Power Low On Resistance Ideal Images |