MOSFET Power Electronics NVMFS5C450NWFAFT1G
Description:
This Power Electronics MOSFET is designed for high-speed switching applications in automotive, industrial, medical, and telecom applications. It features low on-resistance, fast switching speed, and low gate charge for improved system efficiency and low power dissipation.
Features:
• Low on-resistance
• Fast switching speed
• Low gate charge
• RoHS-compliant
• Automotive-grade
• Industrial-grade
• Medical-grade
• Telecom-grade
Specifications:
• Drain-Source Voltage (VDS): 450V
• Maximum Drain Current (ID): 25A
• Maximum Drain-Source on-state Resistance (RDS(on)): 0.0040 Ω
• Maximum Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 36W
• Operating Temperature Range: -55°C to 150°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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NVMFS5C450NWFAFT1G Mosfet Transistor High Performance And Reliable Images
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