Fairchild Semiconductor FDMS6673BZ N-Channel MOSFET Power Electronics
Product Description:
The FDMS6673BZ is an N-channel enhancement mode power field-effect transistor designed for high-speed switching applications. This MOSFET features low gate charge and low on-state resistance, making it ideal for high efficiency power management applications.
Product Features:
• N-Channel Enhancement Mode Power Field-Effect Transistor
• Low Gate Charge
• Low On-State Resistance
• High-Speed Switching
• High Efficiency Power Management
• Very Low Input Capacitance
• High Voltage Rating
• RoHS Compliant
Product Specifications:
• VDSS: 30V
• ID: 9.5A
• RDS(on): 0.59Ω
• Max Power Dissipation: 13.5W
• Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to +150°C
• Package/Case: TO-220-3
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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FDMS86FDMS6673BZ Mosfet Transistor Ideal For High Reliability Applications Images
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