FDS4675 Power MOSFET
This advanced Power MOSFET from Fairchild Semiconductor is designed to deliver high levels of performance and reliability in power applications. It is optimized to provide low gate charge and low on-resistance for superior switching performance.
Features:
• Low on-resistance
• Low gate charge
• Low input capacitance
• High efficiency
• High current handling capability
• Improved switching performance
• High power and thermal cycling capability
• Enhanced avalanche capability
Specifications:
• Package: TO-220
• Drain-source Voltage: 100V
• Gate-source Voltage: ±20V
• Continuous Drain Current: 24A
• Power Dissipation: 110W
• Maximum Operating Temperature: 150°C
• Mounting Type: Through Hole
• Operating Frequency: 1MHz
• Maximum Gate-source Voltage: ±20V
• Drain-source On-resistance: 0.02 Ohm
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor FDS4675 High Performance Low Voltage Switching Images
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