FQD11P06TM MOSFET Power Electronics
Product Description:
The FQD11P06TM MOSFET power electronics is a high performance N-channel MOSFET designed for use in a wide variety of applications. This device offers excellent power efficiency and low on-resistance. It is designed to operate at a temperature range of -55°C to +150°C, making it suitable for a variety of industrial and automotive applications.
Features:
- Low on-resistance
- High power efficiency
- High switching frequency
- High temperature range
- Low gate charge
- Low gate-drain capacitance
- Low reverse transfer capacitance
- Low input capacitance
Specifications:
- Part Number: FQD11P06TM
- Package: TO-252
- Operating Temperature: -55°C to +150°C
- Drain-Source Voltage: 60V
- Gate-Source Voltage: ±20V
- Maximum Drain Current: 11A
- Maximum Power Dissipation: 0.45W
- RDS(on): 0.0087Ω
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor FQD11P06TM 60V 11A N-Channel Low Gate Charge Images
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