FDN86265P is an advanced Power MOSFET from Fairchild Semiconductor. It is designed to provide superior performance in a wide range of applications. This MOSFET offers excellent switching performance and low on-resistance. It is ideal for use in high-efficiency power supplies, automotive applications, and consumer electronics.
Product Specifications:
•VDS (V): 30
•RDS(on) (mΩ): 6.5
•ID (A): 60
•Package Type: TO-220
•Internal Gate Resistance (Rg): 4.3 ohm
•Gate Charge (Qg) (nC): 18
•Maximum Operating Temperature (Tj): 175°C
•Minimum Operating Temperature (Tj): -55°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor FDN86265P High Performance Low Power Dissipation Images
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