FDC640P MOSFET Power Electronics
The FDC640P is a power MOSFET device designed to provide efficient and reliable power conversion in a wide range of applications. With a maximum on-state resistance of 0.6 ohms, it is an ideal choice for high-current switching applications. It also features a low input capacitance that allows for fast switching speeds and improved performance. This device is available in a thermally-enhanced package, allowing for improved device reliability and performance.
Features:
• Maximum on-state resistance: 0.6 ohms
• Maximum drain-source voltage: 60V
• Maximum gate threshold voltage: 4V
• Maximum drain current: 22A
• Maximum junction temperature: 150°C
• Low input capacitance: 2.4pF
• Thermally-enhanced package for improved device reliability and performance
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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FDC640P Mosfet Transistor High Performance Low On-Resistance Images
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