FDN308P MOSFET Power Electronics
Product Description:
The FDN308P is an N-channel enhancement mode power MOSFET designed for use in applications that require high switching performance and excellent power dissipation. This device is designed to deliver high current and low on-state resistance at high frequencies. It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and high frequency power conversion applications.
Features:
• N-channel enhancement mode
• Low on-state resistance
• Low gate-to-drain charge
• Low gate-to-source charge
• Fast turn-on time
• High current capability
• High frequency power conversion applications
Specifications:
• Drain-source voltage: 30V
• Continuous drain current: 8A
• Max. Drain-source on-state resistance: 0.08Ω
• Gate-source threshold voltage: 1.3V
• Maximum operating temperature: 150°C
• Packaging type: TO-220
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor FDN308P High Performance N Channel MOSFETS Images
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