This listing is for a SVD5865NLT4G MOSFET Power Electronics.
Features and Specifications:
- MOSFET Type: N-Channel
- Drain Source Voltage (Vds): 60V
- Drain-Source On-Resistance (Rds): 0.0065 Ohm
- Continuous Drain Current (Id): 58A
- Power Dissipation (Pd): 230W
- Maximum Junction Temperature (Tj): 175 degrees Celsius
- Operating Temperature: -55 to 175 degrees Celsius
- Mounting Type: Surface Mount
- Package/Case: TO-263-3
- Supplier Device Package: TO-263AB
- Lead Free Status / RoHS Status: Lead free / RoHS Compliant
- Product: MOSFET Power Electronics
- Brand: SVD
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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SVD5865NLT4G Mosfet Tube High Power Low On Resistance TO-263AB Images
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