FDP032N08 - N-Channel Power MOSFET
Product Description:
The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing superior switching performance and excellent avalanche energy and dV/dt capabilities.
Features:
• Low on-state resistance
• Fast switching
• Low gate charge
• High avalanche energy
• 260°C operating junction temperature
• Low input capacitance
• RoHS Compliant
Specifications:
• Drain-source voltage (VDS): 30 V
• Drain-source breakdown voltage (BVDSS): 32 V
• Gate-source voltage (VGS): ±20V
• Gate Threshold Voltage (VGS(th)): 2V
• Continuous Drain Current (ID): 8A
• Power Dissipation (PD): 15W
• Operating Temperature Range: -55°C to +150°C
• Channel Mode: Enhancement
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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FDP032N08 Mosfet Tube High Power Switching And Drive Solutions Images
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